PART |
Description |
Maker |
TQ3M31 |
832-894 MHz & 1930-1990 MHz Dual Band LNA From old datasheet system Dual Band LNA: 2.8V, Cellular and PCS Band CDMA/AMPS LNA IC
|
TRIQUINT[TriQuint Semiconductor] TriQuint Semiconductor,Inc.
|
MW5IC2030MBR1 MW5IC2030GMBR1 |
RF LDMOS Wideband Integrated Power Amplifiers 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
|
AGR19030EF |
30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
AGR19060E AGR19060EF AGR19060EU |
60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
XD010-24S-D2F |
1930-1990 MHz Class A/AB 12W CDMA Driver Amplifier
|
sirenza.com SIRENZA MICRODEVICES
|
PTFA192001F PTFA192001E |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
|
Infineon Technologies AG
|
PFM19030 PFM19030SM PFM19030F |
1930-1990 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs
|
List of Unclassifed Manufacturers ETC[ETC]
|
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 14A I(C) | FO-91VAR
|
GHz Technology
|
DSI-253R0.820G DS1-20L1.960G |
810 MHz - 830 MHz RF/MICROWAVE ISOLATOR 1930 MHz - 1990 MHz RF/MICROWAVE ISOLATOR
|
HITACHI METALS LTD
|